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| (R) TDE1890 TDE1891 2A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCH 2A OUTPUT CURRENT 18V TO 35V SUPPLY VOLTAGE RANGE INTERNAL CURRENT LIMITING THERMAL SHUTDOWN OPEN GROUND PROTECTION INTERNAL NEGATIVE VOLTAGE CLAMPING TO VS - 50V FOR FAST DEMAGNETIZATION DIFFERENTIAL INPUTS WITH LARGE COMMON MODE RANGE AND THRESHOLD HYSTERESIS UNDERVOLTAGELOCKOUT WITH HYSTERESIS OPEN LOAD DETECTION TWO DIAGNOSTIC OUTPUTS OUTPUT STATUS LED DRIVER DESCRIPTION The TDE1890/1891 is a monolithic Intelligent Power Switch in Multipower BCD Technology, for BLOCK DIAGRAM MULTIPOWER BCD TECHNOLOGY MULTIWATT11 MULTIWATT11V PowerSO20 (In line) ORDERING NUMBERS: TDE1891L TDE1890V TDE1890D TDE1891V driving inductive or resistive loads. An internal Clamping Diode enables the fast demagnetization of inductive loads. Diagnostic for CPU feedback and extensive use of electrical protections make this device extremely rugged and specially suitable for industrial automation applications. July 1998 1/12 TDE1890 - TDE1891 PIN CONNECTION (Top view) 11 10 9 8 7 6 5 4 3 2 1 D93IN022 OUTPUT SUPPLY VOLTAGE OUTPUT N.C. N.C. GND OUTPUT STATUS INPUT INPUT + DIAGNOSTIC 2 DIAGNOSTIC 1 GND OUTPUT OUTPUT N.C. SUPPLY VOLTAGE SUPPLY VOLTAGE N.C. OUTPUT OUTPUT GND 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 GND OUTPUT STATUS INPUT INPUT + N.C. DIAGNOSTIC 2 DIAGNOSTIC 1 N.C. N.C. GND D93IN021 Note: Output pins must be must be connected externally to the package to use all leads for the output current (Pin 9 and 11 for Multiwatt package, Pin 2, 3, 8 and 9 for PowerSO20 package). ABSOLUTE MAXIMUM RATINGS Symbol VS VS - VO Vi Vi Ii IO Ptot Top Tstg EI Parameter Supply Voltage (Pin 10) (TW < 10ms) Supply to Output Differential Voltage. See also VCl (Pins 10 - 9) Input Voltage (Pins 3/4) Differential Input Voltage (Pins 3 - 4) Input Current (Pins 3/4) Output Current (Pin 9). See also ISC (Pin 9) Power Dissipation. See also THERMAL CHARACTERISTICS. Operating Temperature Range (Tamb) Storage Temperature Energy Induct. Load TJ = 85C Value 50 internally limited -10 to VS +10 43 20 internally limited internally limited -25 to +85 -55 to 150 1 Unit V V V V mA A W C C J THERMAL DATA Symbol Rth j-case Rth j-amb Description Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Multiwatt 1.5 35 PowerSO20 1.5 - Unit EC/W EC/W 2/12 TDE1890 - TDE1891 ELECTRICAL CHARACTERISTICS (VS = 24V; Tamb = -25 to +85C, unless otherwise specified) Symbol Vsmin Vs Iq Vsth1 Vsth2 Vshys Isc Vdon Parameter Supply Voltage for Valid Diagnostics Supply Voltage (operative) Quiescent Current Iou t = Ios = 0 Undervoltage Threshold 1 Undervoltage Threshold 2 Supply Voltage Hysteresis Short Circuit Current Output Voltage Drop VS = 18 to 35V; RL = 2 Iout = 2.0A Tj = 25C Tj = 125C Iout = 2.5A Tj = 25C Tj = 125C Vi = Vil ; Vo = 0V Vi = Vil ; RL = IO = 1A Single Pulsed: Tp = 300s Vi = Vih; Tamb = 0 to +85C VS = 18 to 35V, VS - Vid < 37V Vi = -7 to 15V; -In = 0V V+In > V-In V+In > V-In 0 < +In < +16V ; -In = 0V -7 < +In < 0V ; -In = 0V V+In = V-In 0V < Vi <5.5V -In = GND 0V < V+In <5.5V +In = GND 0V < V-In <5.5V Voth1 Voth2 Vohys Iosd Vosd Ioslk V dgl Idglk Vfdg Output Status Threshold 1 Voltage Output Status Threshold 2 Voltage Output Status Threshold Hysteresis Output Status Source Current Active Output Status Driver Drop Voltage Output Status Driver Leakage Current Diagnostic Drop Voltage Diagnostic Leakage Current Clamping Diodes at the Diagnostic Outputs. Voltage Drop to VS (See fig. 1) (See fig. 1) (See fig. 1) Vout > Voth1 ; Vos = 2.5V VS - Vos ; Ios = 2mA Tamb = -25 to +85C Vout < Voth2 ; Vos = 0V VS = 18 to 35V D1 / D2 = L ; Idiag = 0.5mA D1 / D2 = L ; Idiag = 3mA D1 / D2 =H ; 0 < Vdg < Vs VS = 15.6 to 35V Idiag = 5mA; D1 / D2 = H 2 8.5 0.7 4 5 25 250 1.5 25 2 +Ii -Ii +Ii -Ii +Ii -Ii -20 -75 -250 -100 -50 48 0.5 -7 -250 0.8 50 400 150 +20 -25 +10 -125 -30 -15 11.5 +50 1.4 0.8 53 2.6 360 575 440 700 1 5 500 800 575 920 500 1.5 58 9.5 15 250 2 400 Vil Vih (See fig. 1), Tamb = 0 to +85C 11 15.5 Test Condition Idiag > 0.5mA ; Vdg1 = 1.5V Min. 9 18 24 3 5 Typ. Max. 35 35 7 8 Unit V V mA mA V V V A mV mV mV mV A V V mA V A V mV K K A A A A A A V V V mA V A mV V A V Ioslk Vol Vcl Iold Vid Iib Vith Viths R id Iilk Output Leakage Current Low State Out Voltage Internal Voltage Clamp (VS - VO) Open Load Detection Current Common Mode Input Voltage Range (Operative) Input Bias Current Input Threshold Voltage Input Threshold Hysteresis Voltage Diff. Input Resistance Input Offset Current Note Vil < 0.8V, Vih > 2V @ (V+In > V-In) 3/12 TDE1890 - TDE1891 SOURCE DRAIN NDMOS DIODE Symbol Vfsd Ifp trr tfr Parameter Forward On Voltage Forward Peak Current Reverse Recovery Time Forward Recovery Time Test Condition @ Ifsd = 2.5A t = 10ms; d = 20% If = 2.5A di/dt = 25A/s 200 100 Min. Typ. 1 Max. 1.5 6 Unit V A ns ns THERMAL CHARACTERISTICS O Lim TH Junction Temp. Protect. Thermal Hysteresis 135 150 30 C C SWITCHING CHARACTERISTICS (VS = 24V; RL = 12) ton toff td Turn on Delay Time Turn off Delay Time Input Switching to Diagnostic Valid 200 40 200 s s s Note Vil < 0.8V, Vih > 2V @ (V+In > V-In) Figure 1 TRUE FALSE HIGH LOW DIAGNOSTIC TRUTH TABLE Diagnostic Conditions Normal Operation Open Load Condition (Io < Iold) Short to VS Short Circuit to Ground (IO = ISC) (**) TDE1891 TDE1890 Output DMOS Open Overtemperature Supply Undervoltage (VS < Vsth2) Input L H L H L H H H L H L H L H Output L H L H H H 4/12 TDE1890 - TDE1891 APPLICATION INFORMATION DEMAGNETIZATION OF INDUCTIVE LOADS An internal zener diode, limiting the voltage across the Power MOS to between 50 and 60V (Vcl), provides safe and fast demagnetization of inductive loads without external clamping devices. The maximum energy that can be absorbed from an inductive load is specified as 1J (at T j = 85C). To define the maximum switching frequency three points have to be considered: 1) The total power dissipation is the sum of the On State Power and of the Demagnetization Energy multiplied by the frequency. 2) The total energy W dissipated in the device during a demagnetization cycle (figg. 2, 3) is: W = Vcl Vs Vcl - Vs L [Io - log 1 + ] RL RL Vcl - Vs 3) In normal conditions the operating Junction temperature should remain below 125C. If the demagnetization energy exceeds the rated value, an external clamp between output and +VS must be externally connected (see fig. 5). The external zener will be chosen with Vzener value lower than the internal Vcl minimum rated value and significantly (at least 10V) higher than the voltage that is externally supplied to pin 10, i.e. than the supply voltage. Alternative circuit solutions can be implemented to divert the demagnetization stress from the TDE1890/1, if it exceeds 1J. In all cases it is recommended that at least 10V are available to demagnetize the load in the turn-off phase. A clamping circuit connected between ground and the output pin is not recommended. An interruption of the connection between the ground of the load and the ground of the TDE1890/1 would leave the TDE1890/1 alone to absorb the full amount of the demagnetization energy. Where: Vcl = clamp voltage; L = inductive load; RL = resistive load; Vs = supply voltage; IO = ILOAD Figure 2: Inductive Load Equivalent Circuit 5/12 TDE1890 - TDE1891 Figure 3: Demagnetization Cycle Waveforms Figure 4: Normalized RDSON vs. Junction Temperature D93IN018 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -25 0 25 50 75 100 125 Tj (C) = RDSON (Tj) RDSON (Tj=25C) Figure 5. 6/12 TDE1890 - TDE1891 WORST CONDITION POWER DISSIPATION IN THE ON-STATE In IPS applications the maximum average power dissipation occurs when the device stays for a long time in the ON state. In such a situation the internal temperature depends on delivered current (and related power), thermal characteristics of the package and ambient temperature. At ambient temperature close to upper limit (+85C) and in the worst operating conditions, it is possible that the chip temperature could increase so much to make the thermal shutdown procedure untimely intervene. Our aim is to find the maximum current the IPS can withstand in the ON state without thermal shutdown intervention, related to ambient temperature. To this end, we should consider the following points: 1) The ON resistance RDSON of the output NDMOS (the real switch) of the device increases with its temperature. Experimental results show that silicon resistivity increases with temperature at a constant rate, rising of 60% from 25C to 125C. The relationship between RDSON and temperature is therefore: R DSON = R DSON0 ( 1 + k ) ( T j - 25 ) where: Tj is the silicon temperature in C RDSON0 is RDSON at T j=25C k is the constant rate (k = 4.711 10 -3) (see fig. 4). 2) In the ON state the power dissipated in the device is due to three contributes: the third element are constant, while the first one increases with temperature because RDSON increases as well. 3) The chip temperature must not exceed Lim in order do not lose the control of the device. The heat dissipation path is represented by the thermal resistance of the system deviceambient (Rth). In steady state conditions, this parameter relates the power dissipated Pon to the silicon temperature Tj and the ambient temperature T amb: T j - T amb = P on R th (2) From this relationship, the maximum power Pon which can be dissipated without exceeding Lim at a given ambient temperature Tamb is: P on = Lim - T amb R th Replacing the expression (1) in this equation and solving for Iout, we can find the maximum current versus ambient temperature relationship: I outx = Lim - T amb R th - P q - P os R DSONx a) power lost in the switch: P out = I out 2 R DSON (Iout is the output current); b) power due to quiescent current in the ON state Iq, sunk by the device in addition to Iout: P q = I q V s (Vs is the supply voltage); c) an external LED could be used to visualize the switch state (OUTPUT STATUS pin). Such a LED is driven by an internal current source (delivering I os) and therefore, if Vos is the voltage drop across the LED, the dissipated power is: P os = I os ( V s - V os ). Thus the total ON state power consumption is given by: P on = P out + P q + P os (1) where RDSONx is RDSON at Tj=Lim. Of course, Ioutx values are top limited by the maximum operative current Ioutx (2A nominal). From the expression (2) we can also find the maximum ambient temperature Tamb at which a given power Pon can be dissipated: T amb = Lim - P on R th = = Lim - ( I out 2 R DSONx + P q + P os ) R th In particular, this relation is useful to find the maximum ambient temperature Tambx at which I outx can be delivered: T ambx = Lim - ( I outx 2 R DSONx + + P q + P os ) R th (4) Referring to application circuit in fig. 6, let us consider the worst case: - The supply voltage is at maximum value of industrial bus (30V instead of the 24V nominal value). This means also that Ioutx rises of 25% (2.5A instead of 2A). 7/12 In the right side of equation 1, the second and TDE1890 - TDE1891 - All electrical parameters of the device, concerning the calculation, are at maximum values. - Thermal shutdown threshold is at minimum value. Therefore: Vs = 30V, RDSON0 = 0.23, Iq = 8mA, Ios = 4mA @ Vos = 2.5V, Lim = 135C Rthj-amb = 35C/W It follows: Ioutx = 2.5A, RDSONx = 0.386, Pq = 240mW, Pos = 110mW From equation 4 we can see that, without any heatsink, it is not possible to operate in the ON steady state at the maximum current value. A derating curve for this case is reported in fig. 7. Using an external heatsink, in order to obtain a total Rth of 15C/W, we obtain the derating curve reported in fig. 8. Figure 6: Application Circuit DC BUS 24V +/-25% +Vs +IN -IN + - CONTROL LOGIC OUTPUT P POLLING D1 D2 Ios LOAD GND OUTPUT STATUS D93IN014 Figure 7: Max. Output Current vs. Ambient Temperature (Multiwatt without heatsink, Rth j-amb = 35C/W) D93IN033 Figure 8: Max. Output Current vs. Ambient Temperature (Multiwatt with heatsink, Rth j-amb = 15C/W) D93IN020A Io (A) 2.5 Io (A) 2.5 2.0 2.0 1.5 1.5 1.0 1.0 0.5 0.5 0.0 0 20 40 60 80 100 120 Tamb (C) 0.0 0 20 40 60 80 100 120 Tamb (C) 8/12 TDE1890 - TDE1891 MULTIWATT11 (Vertical) PACKAGE MECHANICAL DATA DIM. MIN. A B C D E F G G1 H1 H2 L L1 L2 L3 L4 L7 M M1 S S1 Dia1 21.9 21.7 17.4 17.25 10.3 2.65 4.25 4.73 1.9 1.9 3.65 4.55 5.08 17.5 10.7 22.2 22.1 0.49 0.88 1.45 16.75 19.6 20.2 22.5 22.5 18.1 17.75 10.9 2.9 4.85 5.43 2.6 2.6 3.85 0.862 0.854 0.685 0.679 0.406 0.104 0.167 0.186 0.075 0.075 0.144 0.179 0.200 0.689 0.421 0.874 0.87 1.7 17 1 0.55 0.95 1.95 17.25 0.019 0.035 0.057 0.659 0.772 0.795 0.886 0.886 0.713 0.699 0.429 0.114 0.191 0.214 0.102 0.102 0.152 0.067 0.669 mm TYP. MAX. 5 2.65 1.6 0.039 0.022 0.037 0.077 0.679 MIN. inch TYP. MAX. 0.197 0.104 0.063 9/12 TDE1890 - TDE1891 MULTIWATT11 (In line) PACKAGE MECHANICAL DATA DIM. MIN. A B C E F G G1 H1 H2 L L1 L3 L4 L7 S S1 Dia1 26.4 22.35 17.25 10.3 2.65 1.9 1.9 3.65 17.5 10.7 0.49 0.88 1.57 16.87 19.6 20.2 26.9 22.85 17.75 10.9 2.9 2.6 2.6 3.85 1.039 0.880 0.679 0.406 0.104 0.075 0.075 0.144 0.689 0.421 1.7 17 mm TYP. MAX. 5 2.65 1.6 0.55 0.95 1.83 17.13 0.019 0.035 0.062 0.664 0.772 0.795 1.059 0.900 0.699 0.429 0.114 0.102 0.102 0.152 0.067 0.669 MIN. inch TYP. MAX. 0.197 0.104 0.063 0.022 0.037 0.072 0.674 10/12 TDE1890 - TDE1891 PowerSO20 PACKAGE MECHANICAL DATA DIM. A a1 a2 a3 b c D (1) D1 E e e3 E1 (1) E2 E3 G H h L N S T 10 (1) "D and F" do not include mold flash or protrusions. - Mold flash or protrusions shall not exceed 0.15 mm (0.006"). - Critical dimensions: "E", "G" and "a3" mm MIN. 0.1 0 0.4 0.23 15.8 9.4 13.9 1.27 11.43 10.9 5.8 0 15.5 0.8 11.1 2.9 6.2 0.1 15.9 1.1 1.1 10 (max.) 8 (max) 0.031 0.228 0.000 0.610 0.429 TYP. MAX. 3.6 0.3 3.3 0.1 0.53 0.32 16 9.8 14.5 0.000 0.016 0.009 0.622 0.370 0.547 0.004 MIN. inch TYP. MAX. 0.142 0.012 0.130 0.004 0.021 0.013 0.630 0.386 0.570 0.050 0.450 0.437 0.114 0.244 0.004 0.626 0.043 0.043 0.394 N N a2 b e A R c DETAIL B a1 E DETAIL A e3 H lead DETAIL A D a3 DETAIL B 20 11 Gage Plane 0.35 slug -C- S E2 T E1 BOTTOM VIEW L SEATING PLANE G C (COPLANARITY) E3 1 10 h x 45 PSO20MEC D1 11/12 TDE1890 - TDE1891 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics MULTIWATT (R) is a Registered Trademark of STMicroelectronics PowerSO20TM is a Trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 12/12 |
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